本发明提供了一种柔性硒化锑太阳电池及其制备方法。本发明所述方法为应用低温磁控溅射法在背电极上制备一层硒化铅背接触层，而后进行后续的硒化锑吸收层、缓冲层、窗口层、顶电极的制备，硒化铅背接触层优化了后续沉积的硒化锑的结晶生长，同时降低了背接触界面的接触势垒，实现了柔性、低温、高效硒化锑薄膜太阳电池的制备。本发明提供了新的低温柔性背接触层制备方法，有效优化硒化锑吸收层生长，同时降低了器件背接触势垒，提升了器件性能，实现了柔性硒化锑太阳电池的制备。

The invention provides a flexible antimony selenide solar cell and a preparation method thereof. According to the method, a lead selenide back contact layer is prepared on a back electrode through a low-temperature magnetron sputtering method, then subsequent preparation of an antimony selenide absorption layer, a buffer layer, a window layer and a top electrode is carried out, crystal growth of subsequently deposited antimony selenide is optimized through the lead selenide back contact layer, meanwhile, the contact barrier of a back contact interface is reduced, and the service life of the back contact interface is prolonged. And the preparation of the flexible, low-temperature and efficient antimony selenide thin film solar cell is realized. The invention provides a novel preparation method of the low-temperature flexible back contact layer, effectively optimizes the growth of the antimony selenide absorption layer, reduces the back contact potential barrier of the device, improves the performance of the device, and realizes the preparation of the flexible antimony selenide solar cell.